| PART |
Description |
Maker |
| APT1001RBVFR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 1KV交五（巴西）直| 11A条（丁）|采用TO - 247AD
|
Microsemi, Corp.
|
| APT1001RBNR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 1KV交五（巴西）直| 11A条（丁）|采用TO - 247AD
|
Advanced Power Technology, Ltd.
|
| APT7575BN |
TRANSISTOR | MOSFET | N-CHANNEL | 750V V(BR)DSS | 13A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 750V直流五（巴西）直|13A条（丁）|采用TO - 247AD
|
TOKO, Inc.
|
| KCM3560A |
76A?00V N-CHANNEL MOSFET
|
KIA Semiconductor Techn...
|
| R6076ENZ1 |
Nch 600V 76A Power MOSFET
|
Rohm
|
| ACDST-99-G ACDST-70-G |
Switching Diodes Array, V-RRM=70V, V-R=70V, P-D=225mW, I-F=200mA
|
Comchip Technology
|
| CDBER70 |
Small Signal Schottky Diodes, V-RRM=70V, V-R=70V, I-O=70mA
|
Comchip Technology
|
| IXGH20N60U1 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-247AD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 40A条一（c）|采用TO - 247AD
|
IXYS, Corp.
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| IRG4BC30WPBF |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）最大\u003d 2.70V @和VGE \u003d 15V的，集成电路\u003d 12A条）
|
International Rectifier, Corp.
|
| APT751R2BN |
9 A, 750 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
|
| SML8075BVR |
12 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
TT electronics Semelab, Ltd.
|
|
